NDB408A Fairchild Semiconductor, NDB408A Datasheet - Page 3

• Manufacturer Part Number: NDB408A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
(Note 2)
t
I
THERMAL CHARACTERISTICS
R
R
Notes:
1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
D(ON)
r
D(OFF)
f
S
SM
rr
rr
SD
g
gs
gd
JC
JA
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 2)
(T
C
Conditions
V
V
V
I
V
V
dI
D
I
= 25°C unless otherwise noted)
S
DD
GS
DS
GS
GS
S
= 12 A, V
/dt = 100 A/µs
= 6 A
= 40 V, I
= 10 V, R
= 64 V,
= 0 V,
= 0 V, I
S
GS
D
= 12 A,
GEN
= 12 A,
= 10V
= 24
T
J
= 125°C
NDP408AE
NDB408AE
NDP408BE
NDB408BE
NDP408AE
NDB408AE
NDP408BE
NDB408BE
NDP408A
NDB408A
NDP408B
NDB408B
NDP408A
NDB408A
NDP408B
NDB408B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
0.87
0.74
Typ
7.5
2.5
4.7
48
22
32
12
68
6
Max
62.5
100
1.3
1.2
20
80
40
60
17
12
11
36
33
7
3
NDP408.SAM
Units
°C/W
°C/W
nC
nC
nC
nS
nS
nS
nS
ns
A
A
A
A
V
V
A