NDB6020 Fairchild Semiconductor, NDB6020 Datasheet - Page 4

• Manufacturer Part Number: NDB6020
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
2 0
1 5
1 0
5
0
Figure 5. Transfer Characteristics
0 .5
6 0
5 0
4 0
3 0
2 0
1 0
1 .8
1 .6
1 .4
1 .2
0 .8
0 .6
Figure 1. On-Region Characteristics.
0
1
Figure 3. On-Resistance Variation
-50
0
V
DS
V
V
GS
I
= 5V
D
GS
-25
with Temperature
= 4.5 V
= 18A
= 4.5V
1
V
GS
0
V
3 .5
T , JUNCTION TEM PERATURE (°C)
DS
J
, GATE TO SOURCE VOLTAGE (V)
1
, DRAIN-SOURCE VOLTAGE (V)
3 .0
2 5
2
2 .7
5 0
.
2 .5
7 5
3
1 .5
T = -55°C
1 0 0
J
.
2 .0
1 2 5
4
125° C
1 .5
1 5 0
25° C
1 7 5
2
5
1 .8
1 .6
1 .4
1 .2
0 .8
0 .6
0 .4
1 .4
1 .2
0 .8
0 .6
0 .4
0 .2
Figure 6. Gate Threshold Variation with
1
1
1 .8
1 .6
1 .4
1 .2
0 .8
Figure 2. On-Resistance Variation with Gate
-50
Figure 4. On-Resistance Variation with Drain
0
1
0
V
V
Temperature
GS
-25
GS
Voltage and Drain Current.
Current and Temperature
= 2.0V
= 4.5 V
1 0
1 0
0
T , JUNCTION TEMPERATURE (°C)
J
2 0
2 5
I
D
2 0
I
D
.
, DRA IN CURRENT (A)
2 .5
, DRA IN CURRENT (A)
5 0
T = 125° C
2 .7
J
3 0
3 0
-55° C
25° C
3 .0
7 5
1 0 0
3 .5
.
4 0
4 0
I
D
V
1 2 5
4 .0
DS
= 250µA
= V
5 0
5 0
4 .5
GS
1 5 0
NDP6020 Rev.C
5 .0
1 7 5
6 0
6 0