NDB710A Fairchild Semiconductor, NDB710A Datasheet - Page 2

• Manufacturer Part Number: NDB710A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE AVALANCHE RATINGS
E
I
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
AR
DSS
GSSF
GSSR
D(on)
FS
AS
GS(th)
DS(ON)
iss
oss
rss
DSS
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
(T
C
= 25°C unless otherwise noted)
(Note 1)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
f = 1.0 MHz
D
D
D
DD
GS
DS
GS
GS
GS
DS
GS
GS
GS
DS
DS
= 250 µA
= 21 A
= 20 A
= 100 V,
= V
= 10 V, I
= 25 V, V
= 25 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V,
= 10 V,
= 10 V, V
= 0 V
GS
,
D
D
D
= 250 µA
DS
DS
GS
= 42 A
DS
= 21 A
= 0 V
= 10 V
= 0 V,
= 0 V
T
T
T
T
J
J
J
J
= 125°C
= 125°C
= 125°C
= 125°C
NDP710AE
NDP710BE
NDB710AE
NDB710BE
NDP710AE
NDB710AE
NDP710BE
NDB710BE
NDP710AE
NDB710AE
NDP710BE
NDB710BE
NDP710A
NDB710A
NDP710B
NDB710B
NDP710A
NDB710A
NDP710B
NDB710B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
100
1.4
42
40
20
2
0.026
0.044
2840
Typ
550
175
2.9
2.2
28
0.038
0.042
3600
Max
-100
0.08
0.09
700
250
100
700
200
3.6
42
1
4
NDP710.SAM
Units
pF
pF
pF
mA
mJ
µA
nA
nA
A
V
V
V
A
A
S