FDU6N50F Fairchild Semiconductor, FDU6N50F Datasheet

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FDU6N50F

Manufacturer Part Number
FDU6N50F
Description
N-channel Mosfet 500v, 5.5a, 1.15
Manufacturer
Fairchild Semiconductor
Datasheet
©2007 Fairchild Semiconductor Corporation
FDD6N50F / FDU6N50F Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*When mounted on the minimum pad size recommended (PCB Mount)
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD6N50F / FDU6N50F
N-Channel MOSFET
500V, 5.5A, 1.15:
Features
• R
• Low gate charge ( Typ. 15nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
TJC
TJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 1.0: ( Typ.)@ V
( Typ. 6.3pF)
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
FDD Series
D-PAK
GS
= 10V, I
D
D
= 2.75A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
o
C unless otherwise noted*
= 25
G
D S
o
C)
C
C
FDU Series
= 25
= 100
I-PAK
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Failchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
0.71
500
±30
300
270
5.5
2.4
5.5
8.9
4.5
S
22
89
1.4
D
83
UniFET
June 2007
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

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FDU6N50F Summary of contents

Page 1

... TJC R Thermal Resistance, Junction to Ambient TJA *When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FDD6N50F / FDU6N50F Rev. A Description = 2.75A These N-Channel enhancement mode power field effect D transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... R = 25:, Starting d5.5A, di/dt d200A/Ps, V dBV , Starting DSS 4: Pulse Test: Pulse width d300Ps, Duty Cycle d2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD6N50F / FDU6N50F Rev unless otherwise noted C Package Reel Size D-PAK 380mm D-PAK 380mm I-PAK - Test Conditions ...

Page 3

... C iss = oss = oss C rss = C gd 1200 C iss 900 600 C rss 300 0 0 Drain-Source Voltage [V] DS FDD6N50F / FDU6N50F Rev. A Figure 2. Transfer Characteristics *Notes: 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 = 20V GS o *Note: T ...

Page 4

... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature 6.0 4.8 3.6 2.4 1.2 0 Case Temperature 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDD6N50F / FDU6N50F Rev. A (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes 250 0.01 100 150 200 100 125 150 Figure 10. Transient Thermal Response Curve ...

Page 5

... FDD6N50F / FDU6N50F Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDD6N50F / FDU6N50F Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + ...

Page 7

... Mechanical Dimensions FDD6N50F / FDU6N50F Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDD6N50F / FDU6N50F Rev. A I-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD6N50F / FDU6N50F Rev. A POEWEREDGE Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ ...

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