FQU13N06 Fairchild Semiconductor, FQU13N06 Datasheet

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FQU13N06

Manufacturer Part Number
FQU13N06
Description
Fqd13n06/fqu13n06 60v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
FQD13N06 / FQU13N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters,
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
high
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
efficiency
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
switching
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
for
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
power
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 10A, 60V, R
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
DS(on)
FQD13N06 / FQU13N06
Typ
--
--
--
= 0.14
-55 to +150
0.22
300
6.3
2.8
7.0
2.5
60
10
40
85
10
28
25
@V
G
!
!
GS
Max
110
4.5
50
QFET
= 10 V
! "
! "
!
!
!
!
S
D
"
"
"
"
"
"
May 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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FQU13N06 Summary of contents

Page 1

... A = 25°C) C Parameter May 2001 QFET = 0. DS(on " " ! " ! " " " " " FQD13N06 / FQU13N06 Units 6 2.8 mJ 7.0 V/ns 2 0.22 W/°C -55 to +150 °C 300 °C Typ Max ...

Page 2

... ≤ 13A, di/dt ≤ 300A/us, V ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to D 25° ...

Page 3

... C 400 iss C oss 300 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 150℃ 10 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 1 10 ※ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Fairchild Semiconductor Corporation Rev. A1. May 2001 ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 8

... Package Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation DPAK 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 0.10 Rev. A1. May 2001 ...

Page 9

... Package Dimensions (Continued) 6.60 0.20 5.34 0.20 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation IPAK (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Rev. A1. May 2001 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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