FQU30N06L Fairchild Semiconductor, FQU30N06L Datasheet

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FQU30N06L

Manufacturer Part Number
FQU30N06L
Description
Fqd30n06l/fqu30n06l 60v Logic N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
FQD30N06L / FQU30N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 24A, 60V, R
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150
• Low level gate drive requirements allowing direct
FQU Series
operation form logic drivers
I-PAK
o
C maximum junction temperature rating
FQD30N06L / FQR30N06L
DS(on)
Typ
--
--
--
= 0.039
-55 to +150
0.35
400
300
4.4
7.0
2.5
60
24
15
96
24
44
20
G
@ V
!
!
Max
2.85
110
50
QFET
GS
! "
! "
= 10V
!
!
!
!
S
D
"
"
"
"
"
"
May 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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FQU30N06L Summary of contents

Page 1

... FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode ...

Page 2

... ≤ 32A, di/dt ≤ 300A/us, V ≤ DSS, 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted A Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 2000 C oss 1500 C iss 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 1 10 150℃ 25℃ Figure 2. Transfer Characteristics 1 10 150℃ ※ Note : T = 25℃ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveform Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation DPAK 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 0.10 Rev. A1. May 2001 ...

Page 8

... Package Dimensions (Continued) 6.60 0.20 5.34 0.20 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation IPAK (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Rev. A1. May 2001 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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