FQU9N08L Fairchild Semiconductor, FQU9N08L Datasheet - Page 3

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FQU9N08L

Manufacturer Part Number
FQU9N08L
Description
80v Logic N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
Typical Characteristics
600
500
400
300
200
100
10
10
10
0.8
0.6
0.4
0.2
0.0
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Top :
Bottom : 3.0 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
V
D
10
GS
, Drain Current [A]
0
10
10
= 10V
0
V
GS
= 5V
15
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
 Notes :
= C
= C
1. 250 s Pulse Test
2. T
= C
10
 Note : T
gs
ds
gd
C
1
+ C
= 25
+ C
20
gd
gd
 Notes :
10
(C
1. V
2. f = 1 MHz
1
ds
J
= shorted)
= 25
GS
= 0 V
25
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
1
150
0.4
Variation vs. Source Current
150
2
2
V
V
0.6
GS
SD
Q
and Temperature
G
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
3
, Total Gate Charge [nC]
V
-55
25
DS
V
= 64V
4
DS
0.8
= 40V
4
5
1.0
6
6
 Notes :
 Notes :
1.2
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
 Note : I
DS
GS
7
= 25V
= 0V
8
1.4
D
= 9.3A
Rev. A2, December 2000
8
10
1.6
9

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