FQU10N20L Fairchild Semiconductor, FQU10N20L Datasheet - Page 3

• Manufacturer Part Number: FQU10N20L
• Description: 200v Logic N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
1500
1200
900
600
300
10
1.6
1.2
0.8
0.4
0.0
10
10
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
10 V
3.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
10
10
0
C
C
C
oss
rss
iss
V
GS
15
= 10V
V
GS
= 5V
C
C
C
iss
oss
rss
 Notes :
= C
= C
= C
10
1. 250 s Pulse Test
2. T
 Note : T
gs
gd
ds
1
C
+ C
+ C
= 25
20
10
 Notes :
gd
gd
1. V = 0 V
2. f = 1 MHz
1
(C
ds
J
= 25
= shorted)
25
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
150
Figure 2. Transfer Characteristics
0.4
150
Variation vs. Source Current
4
2
0.6
V
V
V
DS
25
Q
and Temperature
GS
-55
SD
V
= 160V
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
DS
8
, Total Gate Charge [nC]
V
= 100V
0.8
DS
4
= 40V
1.0
12
6
1.2
16
 Notes :
 Notes :
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
1.4
 Note : I
DS
GS
= 30V
8
= 0V
20
D
1.6
= 10 A
Rev. A2, December 2000
1.8
10
24