FQU7N10L Fairchild Semiconductor, FQU7N10L Datasheet - Page 3

• Manufacturer Part Number: FQU7N10L
• Description: 100v Logic N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
600
500
400
300
200
100
10
10
10
1.5
1.2
0.9
0.6
0.3
0.0
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 3.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
, Drain Current [A]
V
0
10
GS
V
0
GS
= 10V
= 5V
10
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
 Notes :
= C
= C
= C
1. 250 s Pulse Test
2. T
10
15
 Note : T
gs
gd
1
ds
C
+ C
+ C
= 25
10
 Notes :
gd
gd
1
1. V
2. f = 1 MHz
(C
J
ds
GS
= 25
= shorted)
= 0 V
20
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
0.4
1
150
150
Variation vs. Source Current
2
0.6
2
V
V
25
SD
GS
Q
and Temperature
G
0.8
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
DS
-55
3
= 80V
4
V
DS
1.0
= 50V
4
1.2
6
5
1.4
 Notes :
 Notes :
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
 Note : I
6
DS
GS
1.6
= 30V
= 0V
8
D
= 7.3 A
1.8
7
Rev. A2, December 2000
2.0
10
8