MTP3N60 STMicroelectronics, MTP3N60 Datasheet - Page 2

• Manufacturer Part Number: MTP3N60
• Description: N - Channel Enhancement Mode Power Mos Transistor
• Manufacturer: STMicroelectronics

MTP3N60/FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
Symbol
Symbol
V
Symbol
Symbol
R
R
R
R
V
g
( BR)DSS
I
thj-cas e
t hc- sin k
thj- amb
I
I
C
C
E
E
G S(th)
DS( on)
D( on)
fs
C
I
I
G SS
DS S
T
A R
A R
AR
oss
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
D S
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
AR
max,
max,
Parameter
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 10V
> I
> I
case
D D
D( on)
D( on)
GS
< 1%)
< 1%)
= 25 V)
20 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
j
I
D
D
f = 1 MHz
max,
V
= 1 mA
o
= 1.5 A
D S(on) max
D S(on) max
C unless otherwise specified)
G S
= 0
< 1%)
Max
Max
Typ
V
c
I
G S
D
= 125
= 1.5 A
= 0
TO-220
o
C
1.25
Min.
Min.
Min.
600
3.9
1.5
2
62.5
300
Max Value
0.5
ISOWATT220
Typ.
Typ.
Typ.
560
300
2.6
3.9
7.7
2.4
90
40
3
2
3.57
Max.
Max.
Max.
250
800
130
4.5
2.5
25
55
100
o
o
o
Unit
Unit
Unit
Unit
nA
pF
pF
pF
C/W
C/W
C/W
mJ
mJ
o
V
V
A
S
A
A
A
A
C