FQB13N50C Fairchild Semiconductor, FQB13N50C Datasheet - Page 4

• Manufacturer Part Number: FQB13N50C
• Description: Fqb13n50c/fqi13n50c 500v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Package Dimensions
1.2
1.1
1.0
0.9
0.8
10
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
-50
1 0
1 0
1 0
T
vs Temperature
V
J
- 1
- 2
, Junction Temperature [
10
0
1 0
DS
0
1
, Drain-Source Voltage [V]
※ Notes :
Operation in This Area
is Limited by R
- 5
1. T
2. T
3. Single Pulse
D = 0 .5
0 . 1
0 . 0 5
0 . 2
0 . 0 2
0 . 0 1
C
J
= 150
= 25
DC
o
C
o
50
C
Figure 11. Transient Thermal Response Curve
DS(on)
100 ms
(Continued)
1 0
s in g le p u ls e
10 ms
- 4
10
100
2
1 ms
o
t
C]
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
※ Notes :
100 s
1. V
2. I
D
G S
= 250 μ A
= 0 V
150
1 0
10 s
- 3
10
3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
※ N o te s :
1 0
8
6
4
2
0
-100
25
1 . Z
2 . D u t y F a c to r , D = t
3 . T
- 1
Figure 10. Maximum Drain Current
P
Figure 8. On-Resistance Variation
θ J C
J M
DM
- T
( t) = 0 .6 4 ℃ /W M a x .
C
-50
= P
50
vs Case Temperature
t
D M
1
1 0
t
2
* Z
0
T
1
vs Temperature
θ J C
J
/t
T
, Junction Temperature [
2
C
0
, Case Temperature [ ℃ ]
( t)
75
50
1 0
1
100
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 6.5 A
= 10 V
Rev. A, October 2003
150
200