FDPF33N25 Fairchild Semiconductor, FDPF33N25 Datasheet - Page 3

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FDPF33N25

Manufacturer Part Number
FDPF33N25
Description
250v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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FDP33N25 / FDPF33N25 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
10
10
10
2
1
0
10
0.25
0.20
0.15
0.10
0.05
0.00
-1
4000
3000
2000
1000
Top :
Bottom : 5.5 V
Drain Current and Gate Voltage
0
0
10
-1
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
20
V
C
C
C
DS
iss
oss
rss
, Drain-Source Voltage [V]
V
10
DS
0
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
10
40
0
V
GS
= 10V
60
C
C
C
iss
oss
rss
10
V
= C
= C
= C
* Notes :
1
GS
10
* Note : T
1. 250
2. T
gs
gd
ds
= 20V
1
+ C
+ C
C
80
= 25
gd
μ
gd
s Pulse Test
(C
* Note :
J
o
= 25
1. V
2. f = 1 MHz
ds
C
= shorted)
GS
o
C
= 0 V
100
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
12
10
10
10
10
10
10
10
8
6
4
2
0
0
2
1
0
2
1
0
0.2
2
Variation vs. Source Current
and Temperatue
0.4
150
25
o
o
C
4
C
10
150
Q
0.6
V
V
G
SD
GS
, Total Gate Charge [nC]
o
C
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
25
V
V
V
6
o
0.8
DS
DS
DS
C
= 200V
= 50V
= 125V
20
-55
o
C
1.0
8
* Note : I
30
1.2
* Notes :
1. V
2. 250
* Notes :
1. V
2. 250
GS
D
μ
DS
= 0V
= 33A
10
s Pulse Test
μ
= 40V
s Pulse Test
1.4
www.fairchildsemi.com
40
1.6
12

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