SIE844DF Vishay, SIE844DF Datasheet - Page 4

• Manufacturer Part Number: SIE844DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiE844DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
www.vishay.com
4
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
J
25
- Temperature (°C)
0.4
T
J
= 150 °C
50
I
0.6
D
75
= 250 µA
0.01
100
0.1
10
100
1
0.01
Limited by R
0.8
T
Safe Operating Area, Junction-to-Ambient
J
* V
= 25 °C
25 °C, unless otherwise noted
125
GS
> minimum V
V
1.0
150
New Product
Single Pulse
0.1
DS
DS(on)
T
A
- Drain-to-Source Voltage (V)
= 25 °C
*
GS
at which R
1
BVDSS
DS(on)
0.020
0.015
0.010
0.005
0.000
10
50
40
30
20
10
0
0.01
is specified
0
Single Pulse Power, Junction-to-Ambient
I
D
On-Resistance vs. Gate-to-Source Voltage
= 12.1 A
100 µs
1 ms
10 ms
100 ms
10 s
1 s
DC
0.1
100
2
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S-80674-Rev. A, 31-Mar-08
Document Number: 69988
10
6
T
T
100
J
J
= 25 °C
8
= 125 °C
1000
10