SIE800DF Vishay, SIE800DF Datasheet

no-image

SIE800DF

Manufacturer Part Number
SIE800DF
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE800DF-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIE800DF-T1-E3
Quantity:
2 400
Document Number: 73199
S-71684-Rev. E, 13-Aug-07
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?73398
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
10
D
DS
D
1
30
(V)
G
G
2
9
Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free)
Top View
S
3
S
0.0115 at V
8
0.0072 at V
D
r
DS(on)
S
S
4
7
GS
GS
(Ω)
= 4.5 V
= 10 V
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
Limit
N-Channel 30-V (D-S) MOSFET
90
73
6
I
D
5
D
(A)
Package
a
Limit
7
Bottom View
4
50
50
S
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
8
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
3
Q
= 25 °C, unless otherwise noted
12 nC
g
G
9
2
(Typ)
New Product
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Extremely Low Q
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• VRM
• DC/DC Conversion: High-Side
• Synchronous Rectification
Low Switching Losses
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Power MOSFET
Ratio Helps Prevent Shoot-Through
50
http://www.vishay.com/ppg?74414
G
90 (Silicon Limit)
a
For Related Documents
gd
(Package Limit)
- 50 to 150
N-Channel MOSFET
20.6
16.5
WFET Technology for
4.3
5.2
3.3
Limit
± 20
104
50
50
260
30
60
40
80
66
b, c
b, c
b, c
a
b, c
b, c
a
®
Package for
D
S
Vishay Siliconix
SiE800DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

Related parts for SIE800DF

SIE800DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE800DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient a Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... Gate Charge Document Number: 73199 S-71684-Rev. E, 13-Aug-07 New Product 1.6 2.0 2500 2000 1500 1000 500 1.8 1.6 1.4 1 1.0 0.8 0 SiE800DF Vishay Siliconix 125 ° ° °C 0 1.5 2.0 2.5 3.0 3.5 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.00 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2 2.2 1.8 1.4 1 – Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.020 0.016 0.012 0.008 ° ...

Page 5

... S-71684-Rev. E, 13-Aug-07 New Product 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE800DF Vishay Siliconix 50 75 100 125 150 T – Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 5 ...

Page 6

... SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords