SIE812DF Vishay, SIE812DF Datasheet - Page 4

• Manufacturer Part Number: SIE812DF
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
100
10
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1
0.00
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
T
0
J
Threshold Voltage
= 150 °C
- Source-to-Drain Voltage (V)
T
J
- Temperature (°C)
25
0.4
50
I
D
0.6
= 250 µA
75
0.01
100
0.1
10
1
0.01
100
T
r
J
Safe Operating Area, Junction-to-Ambient
DS (on)
*V
0.8
= 25 °C
Single Pulse
GS
T
A
125
Limited
= 25 °C
V
minimum V
DS
0.1
1.0
150
- Drain-to-Source Voltage (V)
GS
at which r
1
BV
DS
DS(on)
Limited
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
10
50
40
30
20
10
is specified
0
0.01
2
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
100 ms
1 s
10 s
dc
10 ms
1 ms
100
0.1
V
4
GS
- Gate-to-Source Voltage (V)
Time (sec)
1
6
S-62025-Rev. A, 16-Oct-06
Document Number: 74337
10
I
D
T
= 25 A
8
100
A
T
= 125 °C
A
= 25 °C
1000
10