SIE726DF Vishay, SIE726DF Datasheet - Page 3

• Manufacturer Part Number: SIE726DF
• Description: N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68626
S-80891-Rev. A, 21-Apr-08
0.004
0.003
0.002
0.001
0.000
10
60
50
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
0.2
25
V
DS
Output Characteristics
V
Q
GS
- Drain-to-Source Voltage (V)
g
V
20
I
V
- Total Gate Charge (nC)
D
GS
= 10 thru 4 V
DS
-- Drain Current (A)
Gate Charge
0.4
50
= 3 V
= 15 V
0.6
75
V
V
GS
GS
V
40
= 4.5 V
DS
= 10 V
= 24 V
V
100
0.8
GS
= 2 V
New Product
125
1.0
60
10000
8000
6000
4000
2000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
0
- 50
8
4
0
0
0
On-Resistance vs. Junction Temperature
I
C
D
rss
= 25 A
- 25
5
V
C
C
V
T
Transfer Characteristics
GS
iss
oss
DS
J
0
1
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
10
T
C
25
Capacitance
T
= 125
C
= 25
15
50
Vishay Siliconix
2
V
75
SiE726DF
GS
20
= 4.5 V
V
www.vishay.com
GS
100
3
T
= 10 V
C
25
= - 55
125
150
30
4
3