RJK1562DJE Renesas Electronics Corporation., RJK1562DJE Datasheet - Page 4

• Manufacturer Part Number: RJK1562DJE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1562DJE
Electrical Characteristics
Notes: 3. Pulse test
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 2 of 6
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
Item
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
V
GS(off)
DS(on)
DS(on)
d(on)
d(off)
Qg
DSS
GSS
t
t
t
DF
rr
r
f
Min
150
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
0.84
Typ
300
1.2
1.2
4.4
3.0
0.5
1.2
18
11
16
78
42
—
—
—
—
—
6
Max
1.30
1.5
1.4
1.6
—
—
—
—
—
—
—
—
—
—
—
—
—
1
10
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
A
A
I
I
V
V
V
I
I
V
V
f = 1 MHz
I
V
R
Rg = 10
V
V
I
I
I
di
D
G
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
L
DD
GS
F
= 1 A, V
= 1 A, V
= 10 mA, V
= 0.5 A, V
= 0.5 A, V
= 0.5 A
= 1 A
= 100 A, V
/dt = 100 A/ s
= 160
= 150 V, V
= 10 V, I
= 25 V
= 10 V, V
= 0
= 4 V
= 120 V
= 4 V
Test conditions
GS
GS
GS
GS
D
= 0
= 0
GS
= 1 mA
GS
DS
= 4 V
= 2.5 V
DS
= 0
Note3
= 0
= 0
(Ta = 25°C)
= 0
Note3
Note3