RJK2511DPK Renesas Electronics Corporation., RJK2511DPK Datasheet - Page 3

• Manufacturer Part Number: RJK2511DPK
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK2511DPK
Main Characteristics
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 3 of 6
400
300
200
100
100
80
60
40
20
4
3
2
1
0
Drain to Source Saturation Voltage vs.
0
0
10 V
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc (°C)
Gate to Source Voltage
4
4
50
8 V
8
8
100
12
12
150
Pulse Test
Pulse Test
I
16
16
D
GS
DS
5.9 V
6.3 V
5.5 V
32.5 A
= 65 A
10 A
5 V
(V)
(V)
200
20
20
0.005
0.002
0.001
1000
0.03
0.01
0.05
0.02
0.01
300
100
100
Static Drain to Source on State Resistance
0.3
0.1
0.1
80
60
40
20
30
10
3
1
0
1
1
Operation in this
area is limited by
R
V
Drain to Source Voltage V
Gate to Source Voltage V
V
Pulse Test
DS(on)
GS
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
= 10 V
3
3
PW = 10 ms
(1shot)
= 10 V
2
Drain Current I
Tc = 75°C
vs. Drain Current
10
10
DC Operation
(Tc = 25°C)
4
30
30
−25°C
6
100
25°C
100
D
Pulse Test
Ta = 25°C
(A)
300
300
8
GS
DS
(V)
(V)
1000
1000
10