RJK5003DPD Renesas Electronics Corporation., RJK5003DPD Datasheet - Page 4

• Manufacturer Part Number: RJK5003DPD
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching Use
• Manufacturer: Renesas Electronics Corporation.

RJK5003DPD
Rev.2.00,
10
10
10
Mar 14, 2006,
10
10
8
6
4
2
0
8
6
4
2
0
7
5
3
2
7
5
3
2
Source to Drain Voltage Characteristics
3
2
1
10
0
0
Switching Characteristics (Typical)
Transfer Characteristics (Typical)
Tc = 25°C
V
Pulse Test
Gate to Source Voltage V
0
Source to Drain Voltage V
V
Pulse Test
Ta = 25°C
DS
GS
= 10 V
Reverse Drain Current vs.
= 0 V
0.4
2
Drain Current I
t d(on)
2
0.8
page 4 of 6
4
(Typical)
3
1.2
6
t r
Tch = 25°C
V
V
R
Pulse Test
D
t d(off)
t f
DD
GS
G
5
(A)
= 25 Ω
= 200 V
= 10 V
1.6
GS
8
SD
7
(V)
(V)
10
10
2
1
10
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
16
12
8
4
0
–75
3
2
1
0
10
0
Drain to Source Voltage V
Drain to Source Voltage (Typical)
Tch = 25°C
I
V
I
Tch = 25°C
f = 1 MHz
V
0
D
D
Channel Temperature (Typical)
Channel Temperature Tch (°C)
GS
GS
= 5 A
= 1 mA
Gate to Source Voltage vs.
= 0 V
= 0 V
–25
4
Gate Charge Qg (nC)
Breakdown Voltage vs.
Gate Charge (Typical)
Capacitance vs.
10
8
1
V
25
DS
12
= 100 V
75
10
16
2
400 V
125
DS
200 V
20
Coss
Crss
Ciss
(V)
175
10
24
3