RJK5012DPP Renesas Electronics Corporation., RJK5012DPP Datasheet - Page 4

• Manufacturer Part Number: RJK5012DPP
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK5012DPP
REJ03G1545-0100 Rev.1.00 May 10, 2007
Page 4 of 6
1000
500
200
100
800
600
400
200
50
20
10
5
2
1
5
4
3
2
1
0
0
-25
1
V
V
Reverse Drain Current
I
D
DS
DS
Dynamic Input Characteristics
Gate to Source Cutoff Voltage
Case Temperature
= 12 A
Body-Drain Diode Reverse
0
3
= 10 V
Gate Charge
8
vs. Case Temperature
25
V
0.1 mA
Recovery Time
DD
10
V
= 100 V
16
DD
50
250 V
400 V
di / dt = 100 A / s
V
I
= 400 V
30
D
GS
250 V
100 V
= 10 mA
75
= 0, Ta = 25 C
24
Qg (nC)
100
100
Tc ( C)
I
1 mA
DR
32
300
V
125
GS
(A)
1000
150
40
16
12
8
4
0
10000
3000
1000
300
100
20
12
30
10
16
4
8
0
3
1
0
Drain to Source Voltage
Source to Drain Voltage
V
f = 1 MHz
GS
Reverse Drain Current vs.
0.4
= 0
Drain to Source Voltage
Source to Drain Voltage
Typical Capacitance vs.
10 V
5 V
100
0.8
V
GS
1.2
= 0 V, 5 V
200
Coss
Crss
Pulse Test
Ciss
1.6
V
V
DS
SD
(V)
(V)
300
2.0