RSM002P03 ROHM Co. Ltd., RSM002P03 Datasheet - Page 3

• Manufacturer Part Number: RSM002P03
• Description: 4v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
Electrical characteristics curves
0.001
0.01
100
10
0.1
0.1
10
1
0.01
Fig.4 Typical Transfer Characteristics
1
0.01
1
1.4 1.6
DRAIN-SOURCE VOLTAGE : −V
GATE-SOURCE VOLTAGE : −V
Ta=125°C
Fig.7 Static Drain-Source
Fig.1 Typical Capacitance
1.8
−25°C
DRAIN CURRENT : −I
75°C
25°C
Ta=125°C
0.1
−25°C
2.0
75°C
25°C
On-State Resistance
vs. Drain Current ( Ι )
vs. Drain-Source Voltage
2.2 2.4 2.6
0.1
1
2.8 3.0 3.2 3.4
D
10
(A)
V
Pulsed
V
Pulsed
DS
GS
GS
Ta=25°C
f=1MHz
V
DS
= −10V
GS
=
(V)
Ciss
Crss
Coss
−
=0V
(V)
10V
100
1
1000
100
10
20
15
10
0.1
10
1
5
0
0.01
1
0.01
0
GATE-SOURCE VOLTAGE : −V
Fig.2 Switching Characteristics
1
Fig.5 Static Drain-Source
Ta=125°C
Fig.8 Static Drain-Source
td(off)
2
−25°C
DRAIN CURRENT : −I
DRAIN CURRENT : −I
75°C
25°C
Gate-Source Voltage
3
On-State Resistance vs.
tf
On-State Resistance
vs. Drain Current ( ΙΙ )
I
I
D
D
= −125mA
4
= −250mA
5
0.1
0.1
td(on)
6
tr
7
D
D
(A)
V
Pulsed
(A)
8
Ta=25°C
Pulsed
Ta=25°C
V
V
R
Pulsed
GS
GS
DD
GS
G
=
=10Ω
= −15V
= −10V
(V)
9
−
4.5V
10
1
1
0.01
0.1
0.1
1
10
0.0
8
7
6
5
4
3
2
1
0
1
0.01
Fig.3 Dynamic Input Characteristics
0
Fig.6 Reverse Drain Current vs.
Ta=25°C
V
I
R
Pulsed
SOURCE-DRAIN VOLTAGE : −V
D
DD
G
=−250mA
0.2
=10Ω
= −15V
TOTAL GATE CHARGE : Qg (nC)
Ta=125°C
Fig.9 Static Drain-Source
0.2
−25°C
Ta=125°C
Source-Drain Voltage
DRAIN CURRENT : −I
75°C
25°C
0.4
−25°C
75°C
25°C
On-State Resistance
vs. Drain Current ( ΙΙΙ )
0.6
RSM002P03
Rev.A
0.4
0.8
0.1
0.6
1.0
1.2
D
(A)
0.8
V
Pulsed
SD
V
Pulsed
1.4
GS
GS
(V)
=0V
=
−
3/4
1.6
4V
1
1