RDX100N60 ROHM Co. Ltd., RDX100N60 Datasheet - Page 2

• Manufacturer Part Number: RDX100N60
• Description: 10v Drive Nch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Reverse recovery time
Reverse recovery charge
∗ Pulsed
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
Q
GSS
DSS
Q
t
t
t
oss
SD
iss
rss
rr
r
gd
fs
f
gs
rr
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
600
2.0
4.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1600
Typ.
0.48
Typ.
175
550
7.0
4.7
30
28
23
75
44
45
10
20
−
−
−
−
−
Max.
Max.
0.65
±10
1.5
4.0
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
µC
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
Ω
V
V
S
V
V
I
V
V
I
V
V
V
f=1MHz
V
I
V
R
R
V
V
I
I
I
di/dt= 100A / µs
D
D
D
D
S
DR
GS
DS
DS
DS
DS
GS
DD
GS
DD
GS
= 10A, V
= 1mA, V
= 5.0A, V
= 5.0A
L
G
= 10A
= 30Ω
=10Ω
= 10A, V
= ±25V, V
= 600V, V
= 10V, I
= 10V, I
= 25V
=0V
= 10V
= 10V
300V
150 V
Conditions
Conditions
GS
GS
GS
D
D
GS
=0V
= 1mA
= 5.0A
=0V
= 10V
GS
=0V
DS
=0V
=0V
RDX100N60
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