STF7NK30Z STMicroelectronics, STF7NK30Z Datasheet - Page 2

no-image

STF7NK30Z

Manufacturer Part Number
STF7NK30Z
Description
N-channel 300v-0.80ohm-5a To-220/to-220fp Zener-protected Supermesh Power Mosfet
Manufacturer
STMicroelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STF7NK30Z
Manufacturer:
ST
Quantity:
5 000
Part Number:
STF7NK30Z
Manufacturer:
ST
Quantity:
12 500
Company:
Part Number:
STF7NK30Z
Quantity:
5 000
Part Number:
STF7NK30Z(023Y)
Manufacturer:
ST
0
Part Number:
STF7NK30Z,7NK30Z
Manufacturer:
ST
0
STP7NK30Z - STF7NK30Z
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
GSO
DS
GS
AS
D
D
5.7A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
= 25 °C, I
DD
V
(BR)DSS
Parameter
Parameter
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
Igs=± 1mA (Open Drain)
= 0)
, V
T
JMAX.
DD
Test Conditions
C
C
= 25°C
= 100°C
= 50 V)
Min.
STP7NK30Z
30
TO-220
3.2
0.4
2.50
20
50
5
-
Max Value
-55 to 150
-55 to 150
Value
Typ.
2800
62.5
± 30
300
300
300
130
4.5
5
STF7NK30Z
TO-220FP
3.2 (*)
20 (*)
2500
6.25
5 (*)
0.16
20
Max.
°C/W
°C/W
Unit
Unit
W/°C
Unit
V/ns
mJ
°C
°C
°C
A
V
W
V
V
V
A
A
A
V
V

Related parts for STF7NK30Z