STY30NA50 STMicroelectronics, STY30NA50 Datasheet - Page 3

• Manufacturer Part Number: STY30NA50
• Description: N - Channel Enhancement Mode Fast Power Mos Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symb ol
Symb ol
Symb ol
(di/dt)
V
I
t
SDM
t
I
r(Vof f)
SD
Q
d(on)
Q
I
Q
RRM
Q
t
t
SD
t
t
rr
r
gs
gd
f
c
g
rr
( )
( )
on
Turn-on T ime
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall T ime
Cross-over T ime
Source-drain Current
Source-drain Current
(pulsed)
Forward O n Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 4.7
= 47
= 4.7
= 30 A
= 30 A
= 250 V
= 400 V
= 400 V
= 400 V I
= 100 V
Test Cond ition s
Test Cond ition s
Test Cond ition s
D
= 30 A
di/dt = 100 A/ s
T
V
j
V
V
GS
V
= 150
I
GS
GS
D
I
GS
D
I
D
V
= 15 A
= 10 V
= 30 A
= 10 V
= 10 V
GS
= 30 A
= 10 V
o
= 0
C
Min.
Min.
Min.
Typ .
Typ .
Typ .
17.6
240
245
120
110
800
40
70
27
75
30
44
Max.
Max.
Max.
STY30NA50
320
100
145
120
1.6
55
90
40
30
A/ s
Un it
Un it
Un it
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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