IPB051NE8NG Infineon Technologies Corporation, IPB051NE8NG Datasheet

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OptiMOS 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R • Very low on-resistance R • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal for high-frequency ...

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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

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Power dissipation P =f(T ) tot C 350 300 250 200 150 100 Safe operating area =25 ° =f parameter 1000 100 10 1 ...

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Typ. output characteristics =f(V =25 ° parameter 400 320 240 6 V 160 5 4 Typ. ...

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Drain-source on-state resistance =100 A; V =f(T DS(on -60 - Typ. capacitances C =f MHz DS GS ...

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Avalanche characteristics =f(t = parameter: T j(start) 1000 100 150 ° Drain-source breakdown voltage =f BR(DSS 100 ...

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PG-TO220-3: Outline Rev. 1.09 IPB051NE8N G page 8 IPI05CNE8N G IPP054NE8N G 2007-08-29 ...

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Rev. 1.09 IPB051NE8N G page 9 IPI05CNE8N G IPP054NE8N G 2007-08-29 ...

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PG-TO-263-3 (D²-Pak) Rev. 1.09 IPB051NE8N G page 10 IPI05CNE8N G IPP054NE8N G 2007-08-29 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...