Applications
04/14/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Ordering Information
*
** Die in wafer form.
Features
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
BV
BV
600V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
20Ω
DS(ON)
0.25A
(min)
I
D(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
BV
300°C
BV
± 20V
VN2460N3
TO-92
DGS
DSS
1
Order Number / Package
Note: See Package Outline section for dimensions.
Advanced DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Product marking for TO-243AA:
Where
TO-243AA*
VN2460N8
= 2-week alpha date code
G
TO-243AA
(SOT-89)
VN4F
D
S
D
VN2460NW
Die**
TO-92
S G D
VN2460