SCH2805 Sanyo Semiconductor Corporation, SCH2805 Datasheet - Page 2

• Manufacturer Part Number: SCH2805
• Description: Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
2230
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1
Side View
Top View
6
1.6
5
2
Parameter
0.5
4
3
0.2
Bottom View
Side View
0.15
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
V F 1
V F 2
yfs
Qg
V R
I R
t rr
C
t r
t f
I D =--1mA, V GS =0
V DS =--60V, V GS =0
V GS = 16V, V DS =0
V DS =--10V, I D =- -1mA
V DS =--10V, I D =- -0.3A
I D =--0.3A, V GS =- -10V
I D =--0.2A, V GS =- -4V
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--10V, V GS =- -10V, I D =--0.5A
V DS =--10V, V GS =- -10V, I D =--0.5A
V DS =--10V, V GS =- -10V, I D =--0.5A
I S =--0.5A, V GS =0
I R =50 A
I F =70mA
I F =100mA
V R =25V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
SCH2805
Conditions
Electrical Connection
1
6
2
5
min
--1.2
400
--60
50
3
4
Ratings
typ
--0.88
12.5
0.52
670
1.3
1.6
3.5
2.4
0.6
0.2
0.8
73
7
4
6
3
8
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
max
0.55
0.85
--2.6
--1.5
1.7
2.3
10
10
--1
1
No.7760-2/6
Unit
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
V
V
V
V
A
A
A