TN0200K Vishay, TN0200K Datasheet

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TN0200K

Manufacturer Part Number
TN0200K
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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TN0200K-T1-E3
Manufacturer:
VISHAY
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Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Ordering Information:
V
DS
G
20
S
(V)
1
2
(SOT-23)
TO-236
Top View
b
a
0.4 at V
0.5 at V
r
DS(on)
TN0200K-T1-E3 (Lead (Pb)-free)
3
J
= 150 °C)
GS
GS
b
D
= 4.5 V
= 2.5 V
(Ω)
N-Channel 20-V (D-S) MOSFETs
b
Marking Code:
K2 = Part Number Code for TN0200K
y = Year Code
w = Week Code
l = Lot Traceability
b
A
I
D
0.73
0.65
= 25 °C, unless otherwise noted
(A)
New Product
K2ywl
T
T
T
T
FEATURES
APPLICATIONS
• TrenchFET
• ESD Protected: 4000 V
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers
• Battery Operated Systems, DC/DC Converters
• Solid-State Relays
• Load/Power Switching-Cell Phones, Pagers
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
®
Symbol
Symbol
T
Power MOSFET
G
R
J,
V
V
I
P
I
DM
I
thJA
DS
GS
D
S
T
D
stg
100 Ω
- 55 to 150
Limit
Limit
0.73
0.58
0.35
0.22
357
± 8
0.3
20
4
Vishay Siliconix
D
S
TN0200K
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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TN0200K Summary of contents

Page 1

... Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers • Battery Operated Systems, DC/DC Converters • Solid-State Relays • Load/Power Switching-Cell Phones, Pagers Marking Code: K2ywl K2 = Part Number Code for TN0200K y = Year Code w = Week Code l = Lot Traceability = 25 °C, unless otherwise noted ° ...

Page 2

... TN0200K Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72678 S-71198–Rev. B, 18-Jun-07 New Product 0.9 1.2 1.5 0.8 1.0 1.2 1.4 TN0200K Vishay Siliconix 200 175 150 125 C iss 100 oss C rss – Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... TN0200K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0 0.0 - 0.1 - 0.2 - 0 – Temperature ( C) J Threshold Voltage 0.01 0.1 1 Time (sec) Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Effective Transient Thermal Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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