FQD3N50C Fairchild Semiconductor, FQD3N50C Datasheet - Page 4

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FQD3N50C

Manufacturer Part Number
FQD3N50C
Description
Fqd3n50c/fqu3n50c 500v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD3N50CTM
Quantity:
2 500
FQD3N50C/FQU3N50C Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
Operation in This Area
is Limited by R
-50
vs. Temperature
V
T
DS
10
J
, Junction Temperature [
, Drain-Source Voltage [V]
1
DS(on)
Notes :
0
1. T
2. T
3. Single Pulse
C
J
= 25
= 150
10
10
10
°
C
°
C
-1
-2
10
0
50
-5
0.0 1
0 .02
D = 0.5
0.0 5
100 ms
0 .1
0.2
10 ms
DC
Figure 11. ransient Thermal Response Curve
10
s ing le p uls e
1 ms
2
100
100
°
C]
10
Notes :
µ
1. V
2. I
-4
s
D
GS
t
= 250
1
150
= 0 V
, S q u a re W a ve P u ls e D u ra tio n [se c]
µ
A
10
10
3
200
-3
(Continued)
4
10
-2
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
3
2
1
0
25
N o te s :
1 . Z
2 . D u ty F a c to r, D = t
3 . T
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 0
-100
-1
θ
JM
JC
(t) = 3 .5
- T
C
vs. Case Temperature
= P
50
-50
D M
°
C /W M a x.
vs. Temperature
10
* Z
T
1
θ
0
C
/t
JC
T
, Case Temperature [
2
(t)
J
, Junction Temperature [
0
75
10
50
1
100
°
100
C]
°
C]
125
Notes :
1. V
2. I
www.fairchildsemi.com
150
D
GS
= 1.5 A
= 10 V
150
200

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