FQI9N50C Fairchild Semiconductor, FQI9N50C Datasheet

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FQI9N50C

Manufacturer Part Number
FQI9N50C
Description
Fqb9n50c/fqi9n50c 500v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FQI9N50C
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2003 Fairchild Semiconductor Corporation
FQB9N50C/FQI9N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• 9 A, 500V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
2
-PAK
DS(on)
FQB9N50C/FQI9N50C
Typ
--
--
--
-55 to +150
=
13.5
1.07
360
135
300
500
0.8
5.4
4.5
36
9
9
30
G
@V
!
!
Max
0.93
62.5
40
QFET
GS
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
Rev. A, August 2003
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQI9N50C Summary of contents

Page 1

... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter QFET = 0 DS(on " " ! " ! " " " " " FQB9N50C/FQI9N50C Units 500 5 360 13.5 mJ 4.5 V/ns 135 W 1.07 W/°C -55 to +150 °C 300 °C Typ Max Units -- 0.93 °C/W ...

Page 2

... 9A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 V, V ...

Page 3

... Drain Current and Gate Voltage 2000 1600 C iss 1200 C oss 800 C rss 400 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2003 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 -100 100 150 200 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters Rev. A, August 2003 ...

Page 8

... Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation (Continued PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters Rev. A, August 2003 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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