SIS402DN Vishay, SIS402DN Datasheet

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SIS402DN

Manufacturer Part Number
SIS402DN
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Document Number: 68684
S-81733-Rev. B, 04-Aug-08
Ordering Information: SiS402DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
3.30 mm
D
7
C
D
= 25 °C.
6
0.008 at V
0.006 at V
D
PowerPAK
Bottom View
5
R
http://www.vishay.com/ppg?73257
D
DS(on)
GS
GS
J
1
(Ω)
= 4.5 V
= 10 V
= 150 °C)
®
S
b, f
1212-8
2
S
N-Channel 30-V (D-S) MOSFET
3
S
3.30 mm
I
4
D
G
(A)
35
35
Steady State
a, g
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
12 nC
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• DC/DC Converter
100 % UIS Tested
- Notebook
- POL
Typical
1.9
24
g
Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
3.2
3.8
Limit
35
19
15
± 20
2
260
35
5.2
30
70
35
61
43
33
b, c
a, g
b, c
b, c
b, c
b, c
g
D
S
Maximum
2.4
33
Vishay Siliconix
SiS402DN
www.vishay.com
°C/W
Unit
Unit
RoHS
mJ
°C
COMPLIANT
W
V
A
A
1

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SIS402DN Summary of contents

Page 1

... Bottom View Ordering Information: SiS402DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... SiS402DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 68684 S-81733-Rev. B, 04-Aug- 2.0 2 SiS402DN Vishay Siliconix ° ° 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2100 C 1800 iss ...

Page 4

... SiS402DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.015 0.012 0.009 °C J 0.006 0.003 0.000 0.8 1.0 1 250 µ ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68684 S-81733-Rev. B, 04-Aug-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiS402DN Vishay Siliconix ...

Page 6

... SiS402DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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