RFG60P03 Fairchild Semiconductor, RFG60P03 Datasheet - Page 2

• Manufacturer Part Number: RFG60P03
• Description: 60a, 30v, Avalanche Rated, P-channel Enhancement-mode Power Mosfets
• Manufacturer: Fairchild Semiconductor

Source-Drain Diode Ratings and Specifications
Electrical Specifications
Forward Voltage
Reverse Recovery Time
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Threshold Gate Charge
Input Capacitance
PARAMETERS
PARAMETERS
Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
T
C
SYMBOL
= +25
V
t
RR
SD
o
C, Unless Otherwise Specified.
SYMBOL
Q
V
r
t
Q
Q
BV
t
DS(ON)
D(OFF)
C
C
GS(TH)
R
R
I
I
D(ON)
G(TOT)
C
t
t
G(-10)
DSS
GSS
OFF
G(TH)
I
I
ON
OSS
RSS
t
t
SD
SD
ISS
DSS
R
F
JC
JA
= -60A
= -60A, dI
TEST CONDITIONS
I
V
V
V
V
I
V
R
R
V
V
V
V
f = 1MHz
D
D
GS
DS
GS
GS
DD
GS
GS
GS
DS
L
GS
= 250 A, V
= 60A, V
= 0.25 , V
SD
4-52
= -30V,
= 0 to -20V
= 0 to -10V
= -25V, V
= V
= 0V
= 20V
= -15V, I
= 0 to -2V
= 2.5
/dt = -100A/ s
TEST CONDITIONS
DS
, I
GS
D
D
GS
GS
GS
= 250 A
= -10V
= 60A
= 0V
= -10V
= 0V
T
T
V
I
R
D
C
C
DD
L
= 60A,
= 0.4
= +25
= +150
= -24V,
o
C
o
C
MIN
-
-
MIN
-30
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
3000
1500
TYP
190
100
525
7.5
20
75
35
40
-
-
-
-
-
-
-
-
-
-
MAX
-1.75
200
0.027
MAX
0.85
100
140
115
230
120
-50
80
-4
-1
9
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
ns
V
C/W
C/W
nA
nC
nC
nC
ns
ns
ns
ns
ns
ns
pF
pF
pF
V
V
A
A