RFG60P06E Fairchild Semiconductor, RFG60P06E Datasheet - Page 4

• Manufacturer Part Number: RFG60P06E
• Description: 60a, 60v, 0.030 Ohm, Esd Rated, P-channel Power Mosfet
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
-200
-100
-120
-10
-90
-60
-30
2.0
1.5
1.0
0.5
0
0.01
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
0
0
-80
If R = 0
t
If R ≠ 0
t
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
AV
AV
V
FIGURE 8. TRANSFER CHARACTERISTICS
DD
V
= (L) (I
= (L/R) ln [(I
GS
= -15V
JUNCTION TEMPERATURE
STARTING T
= V
-40
AS
-2
DS
V
GS
T
) / (1.3RATED BV
, I
J
t
D
AV
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AS
= - 250µA
0
, TIME IN AVALANCHE (ms)
0.1
*R) / (1.3 RATED BV
J
= 150
-4
40
o
C
25
o
DSS
C
-55
80
- V
STARTING T
-6
o
C
DD
DSS
1
)
Unless Otherwise Specified (Continued)
120
- V
o
DD
C)
J
-8
) + 1]
= 25
175
160
o
o
C
C
200
-10
10
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
-120
1.5
1.0
0.5
2.0
-90
-60
-30
0
2.0
1.5
1.0
0.5
0
-80
0
0
FIGURE 7. SATURATION CHARACTERISTICS
-80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
V
GS
GS
I
D
= -10V, I
= -250µA
= -10V
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
-40
V
GS
-40
V
= -20V
DS
T
T
D
J
-2
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
= -60A
, JUNCTION TEMPERATURE (
0
0
40
V
40
GS
= -4.5V
-4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
V
80
C
80
GS
= 25
= -8V
o
120
C
120
o
-6
o
C)
C)
RFG60P06E Rev. B
V
V
V
GS
GS
GS
160
160
= -7V
= -5V
= -6V
200
200
-8