STH165N10F4-2 STMicroelectronics, STH165N10F4-2 Datasheet - Page 4

• Manufacturer Part Number: STH165N10F4-2
• Description: N-channel 100 V, 4.1 M? , 160 A To-220, H2pak Stripfet? Deepgate? Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
1. For TO-220
2. For H²PAK
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
Q
oss
t
t
rss
iss
gs
gd
r
f
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15781 Rev 1
I
V
V
V
V
V
V
D
V
R
(see Figure 2)
V
R
(see Figure 2)
V
V
V
V
(see Figure 3)
DS
DS
GS
DS
GS
GS
DD
DD
DS
GS
DD
GS
G
G
= 250 µA, V
= 4.7 Ω V
= 4.7 Ω, V
= max rating,T
= max rating
= ± 20 V
= V
= 10 V, I
= 10 V, I
= 25 V, f = 1 MHz,
= 0
= 10 V
= 50 V, I
= 50 V, I
= 50 V, I
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
D
GS
D
D
GS
= 250 µA
= 60 A
= 80 A
GS
= 60 A
= 60 A,
= 120 A,
= 10 V
= 0
= 10 V
C
=125 °C
(1)
(2)
STH165N10F4-2, STP165N10F4
Min.
Min.
100
Min.
2
-
-
-
-
10500
Typ.
1170
Typ.
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
4.4
4.1
630
180
Max.
Max.
Max.
100
100
5.5
5.1
-
-
1
4
-
-
Unit
Unit
Unit
nC
pF
pF
pF
nC
nC
ns
ns
ns
ns
mΩ
mΩ
µA
µA
nA
V
V