NE3510M04 Renesas Electronics Corporation., NE3510M04 Datasheet - Page 3

• Manufacturer Part Number: NE3510M04
• Description: L To S Band Low Noise Amplifier N-channel Hj-fet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
250
200
150
100
Remark The graphs indicate nominal characteristics.
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
50
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
0
f = 2.0 GHz
V
DS
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 2 V
5
NF
50
Ambient Temperature T
min
G
10
Drain Current I
a
Frequency f (GHz)
5
Mounted on Glass Epoxy PCB
(1.08 cm
100
15
NF
min
G
2
a
20
× 1.0 mm (t) )
150
D
(mA)
10
25
A
(°C)
V
I
200
A
D
DS
= 15 mA
= +25°C, unless otherwise specified)
30
= 2 V
Data Sheet PG10676EJ01V0DS
250
15
35
24
22
20
18
16
14
12
10
8
6
4
2
0
24
22
20
18
16
14
12
10
8
6
4
2
0
100
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
–1.0
0
0
0
0
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
5
= 2 V
–0.8
Drain to Source Voltage V
Gate to Source Voltage V
1
10
Drain Current I
–0.6
2
15
NF
G
a
min
–0.4
20
3
D
(mA)
25
GS
DS
f = 4.0 GHz
V
–0.2
V
(V)
DS
(V)
NE3510M04
GS
4
–0.1 V
–0.2 V
–0.5 V
–0.7 V
–0.3 V
–0.4 V
–0.6 V
= 2 V
30
= 0 V
35
0
5
24
22
20
18
16
14
12
10
8
6
4
2
0
3