NE3503M04 Renesas Electronics Corporation., NE3503M04 Datasheet - Page 3

• Manufacturer Part Number: NE3503M04
• Description: C To Ku Band Super Low Noise And High-gain Amplifier N-channel Hj-fet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
125
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
50
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
–2.0
0
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
GATE TO SOURCE VOLTAGE
= 2 V
5
Gate to Source Voltage V
50
Ambient Temperature T
Drain Current I
10
100
–1.0
125
15
150
D
(mA)
20
A
GS
(˚C)
A
V
200
(V)
DS
= +25°C, unless otherwise specified)
25
= 2 V
NF
G
a
Data Sheet PG10456EJ01V1DS
min
250
30
0
16
14
12
10
8
6
4
2
0
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
2
Drain to Source Voltage V
4
6
Frequency f (GHz)
8
1.0
10
NF
G
a
12 14 16 18 20
min
DS
V
I
D
NE3503M04
V
DS
(V)
= 10 mA
GS
= 2 V
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
25
20
15
10
5
0
3