NE3517S03 Renesas Electronics Corporation., NE3517S03 Datasheet - Page 3

• Manufacturer Part Number: NE3517S03
• Description: K-band Super Low Noise Amplifier N-channel Gaas Hj-fet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
250
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Remark The graphs indicate nominal characteristics.
50
80
60
40
20
–2.0
0
0
10
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
V
I
DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
D
DS
= 10 mA
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 2 V
12
Gate to Source Voltage V
50
Ambient Temperature T
14
Mounted on Glass Epoxy PCB
(1.08 cm
Frequency f (GHz)
100
16
–1.0
2
× 1.0 mm (t) )
18
150
NF
min
20
A
GS
(°C)
V
200
(V)
G
A
DS
a
= +25°C, unless otherwise specified)
22
= 2 V
Data Sheet PG10787EJ01V0DS
250
24
0
20
19
18
17
16
15
14
13
12
11
10
100
80
60
40
20
20
15
10
–5
0
5
0
–20
OUTPUT POWER, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
DRAIN CURRENT
vs. DRAIN TO SOURCE VOLTAGE
V
f = 20 GHz
DS
–15
= 3 V, I
Drain to Source Voltage V
Input Power P
–10
D
= 15 mA set
1.0
–5
P
in
out
(dBm)
0
DS
I
D
(V)
I
V
–0.2 V
–0.4 V
–0.6 V
G
GS
NE3517S03
5
= 0 V
2.0
10
50
45
40
35
30
25
20
15
10
5
0
3