Product Description
Sirenza Microdevices’ SHF-0186 is a high performance AlGaAs/
GaAs Heterostructure FET (HFET) housed in a low-cost surface-
mount plastic package. The HFET technology improves
breakdown voltage while minimizing Schottky leakage current
resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0186 is +28
dBm when biased for Class AB operation at 8V,100mA. The
+40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including 3G, cellular,
PCS, fixed wireless, and pager systems
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 Technology Court, Broomfield, CO 80021
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SHF-0186
0.05-12 GHz, 0.5 Watt
GaAs HFET
Product Features
•
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Applications
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•
•
+28 dBm Output Power at 1dB Compression
High Drain Efficiency
Analog and Digital Wireless Systems
3G, Cellular, PCS
+40 dBm Output IP3
18 dB Gain at 900 MHz (Application circuit)
15 dB Gain at 1960 MHz (Application circuit)
See App Note AN-020 for circuit details
Fixed Wireless, Pager Systems
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