CGH40045 Cree, Inc., CGH40045 Datasheet
CGH40045
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CGH40045 Summary of contents
Page 1
... RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. FEATURES • ...
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... Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature Screw Torque Thermal Resistance, Junction to Case 1 Note: Measured for the CGH40045F at 43W P 1 Electrical Characteristics (T Characteristics Symbol DC Characteristics 2 Gate Threshold Voltage V GS(th) Gate Quiescent Voltage V ...
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... Typical Performance Gain, Efficiency, and Output Power vs Frequency of the CGH40045F measured in Amplifier Circuit CGH40045F- Power Gain 60 Drain Efficiency 2.3 Gain and Efficiency vs Output Power of the CGH40045F measured in Amplifier Circuit CGH40045F- Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Typical Performance Single Tone CW Gain, Efficiency, and Output Power vs Input Power of the CGH40045F measured in an Amplifier Circuit 2.5GHz 2.4GHz 45 2.6GHz CGH40045F Power Dissipation De-rating Curve Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Typical Performance Simulated Maximum Stable Gain, Maximum Available 0.5 Single Tone CW Gain, Efficiency, and Output Power vs Input Power of the CGH40045F measured in an Amplifier Circuit Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Typical Performance Pulsed Gain and Output Power vs Input Power of the CGH40045F measured in an Amplifier Circuit 800 mA, Freq = 3.6 GHz, Pulse Width=200µS, 10% Duty Cycle Simulated Source and Load Impedances Frequency (MHz) 500 1000 2000 3000 4000 Note 1 ...
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... CGH40045F-TB Demonstration CGH40045F-TB 2.3 - 2.7 GHZ 3-000536 REV 5 Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40045 Rev 2.2 Preliminary Schematic Amplifier Circuit DRAIN GATE GND (+28 V) ...
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... J1 Q1 Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40045 Rev 2.2 Preliminary Amplifier Circuit Bill of Materials Amplifier Circuit Description CAP, 6.8pF, ± -0.25 pF, 0603 CAP, 1.8pF, ± ...
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... Product Dimensions CGH40045F (Package Type — 440193) Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH40045 Rev 2.2 Preliminary PRELIMINARY Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...
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... Cree, Wireless Devices 919.313.5639 Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 0 CGH40045 Rev 2.2 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1 ...