CGH21240F Cree, Inc., CGH21240F Datasheet - Page 2

• Manufacturer Part Number: CGH21240F
• Description: 240 W, 1800-2300 Mhz, Gan Hemt For Wcdma, Lte, Wimax
• Manufacturer: Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Note:
1
2
Electrical Characteristics (T
Notes:
1
2
3
4
5
6
7
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Screw Torque
Thermal Resistance, Junction to Case
Case Operating Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
RF Characteristics
Saturated Output Power
Pulsed Drain Efficiency
Modulated Gain
WCDMA Linearity
Modulated Drain Efficiency
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
2
Refer to the Application Note on soldering at
Measured for the CGH21240F at P
Measured on wafer prior to packaging.
Scaled from PCM data.
Pulse Width = 40 μS, Duty Cycle = 5 %.
P
Measured in CGH21240F-TB.
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Includes package and internal matching components.
SAT
is defined as I
CGH21240F Rev 0.2 Preliminary
6
6
7
7
5
1
(T
3
1
G
2
C
3,4
= 25
= 20 mA peak.
6
2
˚
C, F
0
2
= 2.14 GHz unless otherwise noted)
Symbol
V
ACLR
V
P
V
G
C
C
C
GS(th)
GS(Q)
I
DISS
DS
SAT
η
η
GD
BR
SS
GS
DS
C
= 115 W
= 25˚C)
Min.
46.4
13.5
-3.8
84
27
www.cree.com/products/wireless_appnotes.asp
–
–
–
–
–
–
–
Symbol
P
I
V
T
R
V
GMAX
T
T
DISS
T
DSS
STG
τ
GS
θJC
S
C
J
Typ.
56.0
-3.3
-3.0
100
215
159
-35
4.8
65
15
33
17
Max.
-2.3
-30
–
–
–
–
–
–
–
–
–
–
-55, +150
-40, +105
-10, +2
Rating
0.75
115
225
245
84
60
80
Units
VDC
VDC
VDC
dBc
dB
%
%
pF
pF
pF
W
A
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
GS
DD
DD
DD
DD
DD
DS
DS
DS
= 10 V, I
= 28 V, I
= 6.0 V, V
= -8 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, V
= 28 V, V
= 28 V, V
D
D
D
DQ
DQ
DQ
DQ
DQ
gs
gs
gs
GS
= 57.6 mA
= 57.6 mA
= 1.0 A
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= 1.0 A
= 1.0 A, P
= 1.0 A, P
= 1.0 A, P
= 1.0 A, P
= 2.0 V
USA Tel: [phone]
Units
Watts
˚C/W
in-oz
www.cree.com/wireless
Volts
Volts
Fax: [phone]
mA
˚C
˚C
˚C
˚C
Durham, NC 27703
OUT
OUT
OUT
OUT
4600 Silicon Drive
= P
= 46 dBm
= 46 dBm
= 46 dBm
SAT
Cree, Inc.