NE27200 Renesas Electronics Corporation., NE27200 Datasheet
NE27200
Related parts for NE27200
NE27200 Summary of contents
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... BAND SUPER LOW NOISE AMPLIFIER DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. ...
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... Ambient Temperature – ˚ 5.5 58 36.5 66 Drain Source Source Gate 350 ˚C) A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 200 250 0 V – Drain to Source Voltage – NE32500, NE27200 –0.2 V –0.4 V –0.6 V –0.8 V 1.5 3.0 ...
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... Gate to Source Voltage – NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT GHz 20 16 2.0 12 1.5 1 NE32500, NE27200 – Drain Current – ...
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... NE32500, NE27200 S 22 MAG. ANG. (deg.) 0.564 –3 0.562 –6 0.559 –11 0.557 –17 0.551 –23 0.546 –29 0.539 –34 0.533 –40 0.526 –44 0.519 –49 0.508 –54 0.503 – ...
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... The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. NE32500, NE27200 CAUTION 5 ...
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... NE32500, NE27200 ...
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... NE32500, NE27200 7 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. NE32500, NE27200 M4 96.5 ...