SLD323V Sony Electronics, SLD323V Datasheet

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SLD323V

Manufacturer Part Number
SLD323V
Description
High Power Density 1w Laser Diode
Manufacturer
Sony Electronics
Datasheet
Description
diode produced by MOCVD method
the SLD300 Series, this laser diode has a high
brightness output with a doubled optical density
which can be achieved by QW-SCH structure
Features
• High power
• Low operating current: Iop = 1.4A (Po = 1.0W)
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
Operating Lifetime
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature (Tc) Topr
• Storage temperature
Warranty
This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is
shorter.
Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the
analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the
product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull distribution.
Special warranties are also available.
1
2
The SLD323V is a high power, gain-guided laser
Recommended optical power output: Po = 1.0W
GaAlAs quantum well structure laser diode
MTTF 10,000H (effective value) at Po = 1.0W, Tc = 25°C
MOCVD: Metal Organic Chemical Vapor Deposition
QW-SCH: Quantum Well Separate Confinement
Heterostructure
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
High Power Density 1W Laser Diode
Pomax
V
Tstg
R
LD
PD
1
. Compared to
–10 to +30
–40 to +85
2
.
1.1
15
2
– 1 –
Pin Configuration
°C
°C
W
V
V
Bottom View
SLD323V
2
3
M-248
1
1. LD cathode
2. PD anode
3. COMMON
E93207C19-PS

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SLD323V Summary of contents

Page 1

... High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure 1 MOCVD: Metal Organic Chemical Vapor Deposition ...

Page 2

... Full Width at Half Maximum 1 Wavelength Selection Classification Type Wavelength (nm) SLD323V-1 795 ± 5 SLD323V-2 810 ± 10 SLD323V-3 830 ± 10 Type Wavelength (nm) SLD323V-21 798 ± 3 SLD323V-24 807 ± 3 SLD323V-25 810 ± 3 Min. Conditions Symbol Ith Iop P = 1.0W O Vop 1.0W 790 ...

Page 3

... Imon – Monitor current [mA] Power dependence of far field pattern (Parallel to junction 1000mW 800mW 600mW 400mW 200mW O –60 – Angle [degree] (Parallel to junction 1000mW – –60 – Angle [degree] SLD323V 90 90 ...

Page 4

... Angle [degree] Differential efficiency vs. Temperature characteristics 1.0 0.5 0 – – Case temperature [ 1000mW O 820 810 800 – 790 60 90 – – 4 – SLD323V Dependence of wavelength Po = 1000mW – Case temperature [ C] ...

Page 5

... Power dependence of spectrum 1 400mW 0.8 0.6 0.4 0.2 802 804 806 Wavelength [nm] 1 800mW 0.8 0.6 0.4 0.2 802 804 806 Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 808 810 1.0 0.8 0.6 0.4 0.2 808 810 – 5 – 600mW 802 804 806 808 810 Wavelength [nm 1000mW 802 804 806 808 810 Wavelength [nm] SLD323V ...

Page 6

... Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 790 795 800 805 Wavelength [nm] 1 –10 C 0.8 0.6 0.4 0.2 810 815 820 1 0.8 0.6 0.4 0.2 810 815 820 – 6 – 790 795 800 805 810 Wavelength [nm 790 795 800 805 810 Wavelength [nm] SLD323V 815 820 815 820 ...

Page 7

... LASER DIODE AVOID EXPOSURE Laser radiation is OVER 1 W emitted from this 600 - 950 nm aperture. – 7 – SLD323V LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan ...

Page 8

... Package Outline Unit: mm Optical Distance = 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 (LO-11) Reference Slot 1 Photo Diode 0 9.0 – 0.015 7.7 MAX 6.9 MAX Window Glass 3.5 Reference Plane LD Chip 3 – 0.45 PCD 2.54 M-248 PACKAGE MASS – 8 – SLD323V 1.2g Sony Corporation ...

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