NE9000 Renesas Electronics Corporation., NE9000 Datasheet
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NE9000
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NE9000 Summary of contents
Page 1
... GaAs FETs for commercial and space amplifier and oscillator applications to 20 GHz. Chip configu- rations available are: the NE900000, a one cell die of 400 m gate width; the NE900100, a one cell die of 750 m gate width; and the NE900200, a two cell die of 1500 m total gate width ...
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... OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 75 +0.15 GATE 1.8 -0.05 0.5 ± 0.1 2 PLACES SOURCE DRAIN 2.7 TYP 7.0 9.8 MAX +0.06 0.1 -0.02 NE900000 (CHIP) (Units in m) 400 131 Die Thickness: 110 to 160 m Recommended Bonding Area. Glassivated Area Plated Wraparound (Optional) HANDLING PRECAUTIONS DIE ATTACHMENT Die attach can be accomplished with Au-Ge (390 10 C) preforms in a forming gas environment ...
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... TYPICAL SMALL SIGNAL SCATTERING PARAMETERS NE900000 FREQUENCY S 11 (MHz) MAG ANG 2000 .96 -42 3000 .90 -59 4000 .87 -73 5000 .85 -85 6000 .82 -94 7000 .79 -103 8000 .75 -112 9000 .73 -120 10000 .72 -128 11000 .71 -134 12000 .72 -140 13000 .73 -144 14000 .74 -147 15000 ...
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... NE9000, NE9001, NE9002 SERIES NE900200 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS S11 18 GHz S22 18 GHz NE900200 180 FREQUENCY S 11 GHz MAG ANG 1.5 0.910 -88.000 2.0 0.879 -106.000 3.0 0.850 -129.000 4.0 0.836 -143.000 5.0 0.830 -153.000 6.0 0.827 -160.000 7.0 0.823 -165.000 8.0 0.824 -170.000 9.0 0.822 -174 ...
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... NE9000, NE9001, NE9002 SERIES TYPICAL SMALL SIGNAL SCATTERING PARAMETERS S22 2 GH S11 S11 NE900275 180 FREQUENCY S 11 GHZ MAG ANG 2.0 0.900 -123.000 3.0 0.900 -146.000 4.0 0.870 -161.000 5.0 0.860 -172.000 6.0 0.850 -180.000 7.0 0.850 172.000 8.0 0.830 162.000 9.0 0.770 151.000 10 ...