HSG1002 Renesas Electronics Corporation., HSG1002 Datasheet - Page 3

no-image

HSG1002

Manufacturer Part Number
HSG1002
Description
Sigehbt High Frequency Low Noise Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
HSG1002
Main Characteristics
Rev.1.00, Apr.12.2004, page 3 of 37
500
400
300
200
100
300
250
200
150
100
45
40
35
30
25
20
15
10
50
0
5
0
0
1
0.1
Collector Power Dissipation Curve
Value on PCB
(FR-4: 40 x 40 x 1.6 mm
VCE=2V
f=1GHz
Ambient Temperature
Gain Bandwidth Product vs.
DC Current Transfer Ratio vs.
Collector Current
Collector Current
Double side)
50
Collector Current
Collector Current
1
VCE=3V
100
10
VCE=1V
I
10
C
I
C
(mA)
Ta (°C)
150
(mA)
VCE=3V
VCE=1V
VCE=2V
200
100
100
0.20
0.15
0.10
0.05
35
30
25
20
15
10
30
25
20
15
10
0
5
0
5
0
1
Collector to Emitter Voltage
|S
V
f=1.8GHz
Collector to Base Voltage V
Reverse Transfer Capacitance vs.
21
CE
Typical Output Characteristics
|
2
=1V
Collector Current
,MSG, vs. Collector Current
Collector to Base Voltage
1
1
10
MSG
S21
2
2
I
C
f=1MHz
(mA)
V
CB
CE
(V)
(V)
100
3
3

Related parts for HSG1002