TN8 STMicroelectronics, TN8 Datasheet - Page 5

• Manufacturer Part Number: TN8
• Description: 8a Scrs
• Manufacturer: STMicroelectronics

Figure 9: Relative variation of dV/dt immunity
versus
values) for TS8 series
Figure 11: Surge peak on-state current versus
number of cycles
Figure 13: On-state characteristics (maximum
values)
50.0
10.0
10.00
100
1.0
1.00
0.10
90
80
70
60
50
40
30
20
10
0.1
0.01
0
0.0
1
I
I
TSM
0
TM
dV/dt[R
TN8 / TS8
(A)
(A)
V =0.85V
R =46m
200
T max.:
t0
d
0.5
j
T
gate-cathode
j
=max
GK
Ω
400
TYN08
] / dV/dt[
Repetitive
T =110°C
C
1.0
600
10
T =25°C
1.5
R
Non repetitive
T initial=25°C
Number of cycles
j
j
800
GK
R
=220 ]
V
GK
1000
TM
2.0
(k )
Ω
resistance
(V)
Ω
1200
2.5
100
1400
3.0
1600
t =10ms
V = 0.67 x V
p
D
One cycle
T
j
= 125°C
1800
3.5
(typical
DRM
2000
1000
4.0
Figure 10: Relative variation of dV/dt immunity
versus
values) for TS8 series
Figure 12: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Figure 14: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed circuit board FR4, copper
thickness: 35µm) (DPAK)
100
15.0
12.5
10.0
1000
80
60
40
20
7.5
5.0
2.5
0.0
100
0
10
0.01
R
0
0
dV/dt[C
th(j-a)
I
TSM
20
2
(A), I t (A s)
dI/dt limitation
(°C/W)
gate-cathode
GK
40
2
] / dV/dt[
4
TN8, TS8 and TYNx08 Series
60
2
6
0.10
R
80
GK
8
=220 ]
S(cm²)
C
100
t (ms)
p
GK
10
capacitance
(nF)
Ω
120
12
140
TN8 / TS8
1.00
I t
2
14
I
TSM
160
16
180
TN8 / TS8
V = 0.67 x V
TYN08
T initial = 25°C
TYN08
D
j
R
T
GK
j
= 125°C
(typical
= 220
200
18
Ω
DRM
10.00
5/10
220
20