EMT18 ROHM Co. Ltd., EMT18 Datasheet

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EMT18

Manufacturer Part Number
EMT18
Description
General Purpose Transistors Dual Transistors
Manufacturer
ROHM Co. Ltd.
Datasheet

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EMT18
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Quantity:
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Transistors
General purpose transistors
(dual transistors)
EMT18 / UMT18N / IMT18
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
∗1 Single pulse P
∗2 120mW per element must not be exceeded.
∗3 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta=25°C)
automatic mounting machines.
interference.
EMT18 / UMT18N
Tr
(3)
(4)
2
Parameter
(2)
(5)
W
=1ms
(1)
(6)
Tr
1
Tr
IMT18
2
(4)
(3)
(5)
(2)
P
C
Symbol
V
V
V
(6)
(1)
Tstg
I
Tj
CBO
CEO
EBO
I
Tr
CP
C
UMT6
EMT6
SMT6 300 (TOTAL)
1
1
and Tr
150 (TOTAL)
−55 to +150
Limits
−500
−15
−12
150
1.0
−6
2
.
∗1
∗2
∗3
Unit
mW
mA
°C
°C
V
V
V
A
Dimensions (Unit : mm)
EMT18
ROHM :
UMT18N
ROHM : UMT6
EIAJ : SC-88
IMT18
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
EMT6
EMT18 / UMT18N / IMT18
Abbreviated symbol :
Abbreviated symbol :
Abbreviated symbol :
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.B
T18
T18
T18
1/3

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EMT18 Summary of contents

Page 1

... Transistors General purpose transistors (dual transistors) EMT18 / UMT18N / IMT18 Features 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr ...

Page 2

... Ta=25°C Ta= −40° 100 200 500 1000 COLLECTOR CURRENT : I (mA) C Fig.2 DC Current Gain vs. Collector Current EMT18 / UMT18N / IMT18 Conditions = −15V = −6V = −200mA / −10mA B = −2V −10mA C = −2V, I =10mA, f=100MHz E = −10V, I =0A, f=1MHz E 1000 500 200 100 Ta=125° ...

Page 3

... Ta=125°C 1000 500 200 100 100 200 COLLECTOR CURRENT : I (mA) C Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current (V) EMT18 / UMT18N / IMT18 1000 =20 B 500 200 100 100 200 500 1000 EMITTER CURRENT : I Fig ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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