VEC2305 Sanyo Semiconductor Corporation, VEC2305 Datasheet
VEC2305
Manufacturer Part Number
VEC2305
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.VEC2305.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VEC2305-TL-E
Manufacturer:
SANYO
Quantity:
60 000
Ordering number : ENN7718
VEC2305
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : BW
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
•
•
•
For load switches, DC / DC converters.
1.8V drive.
Composite type with 2 P-Channel MOSFETs (MCH3319) contained in a singlepackage, facilitaing high-density
mounting.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
P T
yfs
I D
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
I D =--1mA, V GS =0
V DS =- -12V, V GS =0
V GS = 6.4V, V DS =0
V DS =- -6V, I D =--1mA
V DS =- -6V, I D =--1.5A
I D =--1.5A, V GS =- -4.5V
I D =--0.8A, V GS =- -2.5V
I D =--0.4A, V GS =- -1.8V
V DS =- -6V, f=1MHz
V DS =- -6V, f=1MHz
V DS =- -6V, f=1MHz
VEC2305
Conditions
Conditions
2
2
0.8mm)1unit
0.8mm)
min
--0.3
--12
71504 TS IM TA-101071
2.7
Ratings
typ
Ratings
122
162
450
100
4.5
87
85
--55 to +150
Continued on next page.
max
--2.5
150
--1.0
--12
--10
0.9
1.0
115
172
275
--10
10
8
No.7718-1/4
Unit
Unit
m
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A
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VEC2305 Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2305 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...
Page 2
... =--6V =--4.5V -2.5A Qgs V DS =--6V =--4.5V -2.5A Qgd V DS =--6V =--4.5V -2. =--2.5A 0. Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 --1. OUT VEC2305 S Ratings min typ max 6.5 0.8 2.0 --0.85 Electrical Connection ...
Page 3
... 1 --0.1 --1.0 Drain Current Time -- 100 (on --0.1 --1.0 Drain Current VEC2305 --3 --6V --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.4 --0.5 --0.2 IT06894 300 Ta=25 C 250 200 150 100 50 0 --6 --7 --8 --60 --40 IT06896 -- --1 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2004. Specifications and information herein are subject to change without notice. VEC2305 3 2 --10 7 ...