VEC2602 Sanyo Semiconductor Corporation, VEC2602 Datasheet

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VEC2602

Manufacturer Part Number
VEC2602
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN8021
VEC2602
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : BE
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Best suited for inverter applications.
The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
thereby enabling high-density mounting.
4V drive.
Mounting height 0.75mm.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V GSS
I GSS
I DSS
Coss
Crss
Ciss
Tstg
I DP
Tch
P D
P T
yfs
I D
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =2A
I D =2A, V GS =10V
I D =1A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
VEC2602
Conditions
Conditions
2
2
0.8mm)1unit
0.8mm)
N1004PE TS IM TB-00000135
N-channel
min
1.0
2.2
30
--55 to +150
30
20
16
4
Ratings
150
0.9
1.0
typ
370
3.6
37
70
85
47
P-channel
Continued on next page.
max
- -30
- -12
20
--3
2.4
10
48
99
1
No.8021-1/6
Unit
Unit
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

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VEC2602 Summary of contents

Page 1

... Ordering number : ENN8021 VEC2602 Features Best suited for inverter applications. • The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, • thereby enabling high-density mounting. 4V drive. • Mounting height 0.75mm. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage ...

Page 2

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 VEC2602 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =10V =10V =4A Qgs ...

Page 3

... Ta=25 C --200 --180 --160 --140 --120 --100 --80 --60 --40 -- IT07738 --15V --1. = OUT G VEC2602 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage --10V 0 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage (on ...

Page 4

... Diode Forward Voltage Ciss, Coss, Crss -- V DS 1000 100 Drain-to-Source Voltage VEC2602 [Nch] 200 180 160 140 120 100 100 125 150 --50 --25 IT07740 [Nch 1 ...

Page 5

... Drain-to-Source Voltage 1.2 Mounted on a ceramic board (900mm 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature VEC2602 [Nch] -- --10V -- --3A --8 --7 --6 --5 --4 --3 --2 -- IT07748 [Nch --15V --10V 100 7 ...

Page 6

... Note on usage : Since the VEC2602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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