VEC2611 Sanyo Semiconductor Corporation, VEC2611 Datasheet - Page 5

• Manufacturer Part Number: VEC2611
• Description: N-channel And P-channel Silicon Mosfets
• Manufacturer: Sanyo Semiconductor Corporation

1000
0.01
100
1.0
0.1
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
1.2
1.0
0.9
0.8
0.6
0.4
0.2
7
5
3
2
7
5
3
2
0.01
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
V DS =10V
I D =3A
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
Operation in this
area is limited by R DS (on).
2 3
2
1
20
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
2
5 7
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
0.1
6
3
60
V GS -- Qg
2
8
4
P D -- Ta
3
A S O
5 7
10
80
5
1.0
12
6
100
2
✕0.8mm) 1unit
2
14
7
3
120
5 7
16
8
PW ≤10µs
[Nch, Pch]
f=1MHz
10
140
18
IT03497
IT03498
IT11102
IT11104
9
[Nch]
[Nch]
[Nch]
2
160
20
10
VEC2611
3
--0.01
1000
--1.0
--0.1
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--10
100
--0.01
7
5
3
2
7
5
3
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
V DS = -- 6V
I D = --2.6 A
2 3
Operation in this
area is limited by R DS (on).
1
--2
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
Total Gate Charge, Qg -- nC
--0.1
2
--4
V GS -- Qg
2
3
3
A S O
--6
5 7
--1.0
4
2
✕0.8mm) 1unit
--8
2
5
3
PW ≤10µs
5 7
No. A0425-5/6
--10
f=1MHz
--10
6
IT04332
IT04333
IT11103
100µs
[Pch]
[Pch]
[Pch]
2
--12
7
3