DME800 Microsemi Corporation, DME800 Datasheet

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DME800

Manufacturer Part Number
DME800
Description
800 Watts, 50 Volts Pulsed Avionics 1025 To 1150 Mhz
Manufacturer
Microsemi Corporation
Datasheet

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DME800
Manufacturer:
MINI
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Part Number:
DME800
Manufacturer:
MICROSEMI/美高森美
Quantity:
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GENERAL DESCRIPTION
The DME800 is a high power COMMON BASE bipolar transistor.
designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width
and duty required for DME applications.
metalization for proven highest MTTF. The transistor includes input and output
prematch for broadband capability. Low thermal resistance package reduces
junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
Maximum Voltage and Current
Collector to Base Voltage (BV
Emitter to Base Voltage (BV
Collector Current (I
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
P
η
R
Pd
VSWR
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
BV
h
θjc
NOTES: 1. At rated output power and pulse conditions
Issued June 2003
Tr
FE
out
g
c
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
L
2
ebo
ces
2. At rated pulse conditions
CHARACTERISTICS
Power Out
Power Gain
Collector Efficiency
Return Loss
Rise Time
Pulse Droop
Load Mismatch Tolerance
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
c
)
Visit our web site at
1
ebo
ces
)
-65 to +200 °C
)
+200 °C
2500 W
1
65 V
50 A
3 V
www.advancedpower.com
The device has gold thin-film
Long Term Duty Factor = 1%
I
I
V
e
c
ce
= 20 mA
= 50 mA
= 5V, I
TEST CONDITIONS
Pulse Width = 10 µs,
F = 1025-1150 MHz
Pin = 100 Watts
Vcc = 50 Volts
F = 1025 MHz
c
= 600mA
Pulsed Avionics 1025 to 1150 MHz
or contact our factory direct.
800 Watts, 50 Volts
It is
DME800
MIN
3.0:1
800
9.0
3.5
40
65
20
-9
CASE OUTLINE
(Common Base)
TYP
0.04
55ST-1
MAX
1000
0.06
10.0
200
0.7
UNITS
°C/W
dB
dB
dB
W
%
ns
V
V

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DME800 Summary of contents

Page 1

... GENERAL DESCRIPTION The DME800 is a high power COMMON BASE bipolar transistor. designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width and duty required for DME applications. metalization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life ...

Page 2

... Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at 70.0 1400 60.0 1200 50.0 1000 40.0 30.0 20.0 10.0 0.0 100 125 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 100 125 www.advancedpower.com or contact our factory direct. DME800 Power Output & Efficiency vs. Power Input F=1090 MHz 800 600 400 200 100 Power Input (Wpk) 1090 MHz Eff (%) 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 125 ...

Page 3

... Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. DME800 ...

Page 4

... Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. DME800 ...

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